HE312/ hem312 1 17 18 100 frequency(mhz) gain(db) t a=+25 t a=+85 t a= - 5 5 1 frequency(mhz) vswr 1.2 1.6 1.8 50 50 50 100 100 100 1 1 5 3 frequency(mhz) fn(db) t a=+25 t a=+85 t a= - 5 5 1 frequency(mhz) 1 19 f ea tur es l frequency range: 1 100mhz l l l e l e c t r i c a l ( 5 0 , v = + 1 5 v , t = - 5 5 + 8 5 ) cc a t o-8f 1 2 3 4 +15v c2 c1 1 4 2 out in f f l h mh z 1 100 - - gp db 15.0 17.0 gp db 1.0 0.3 fn db 4.5 3.5 - - 2.0 : 1 1.5:1 p -1 dbm 19.0 * i cc ma 65 note: 1) * f =30mhz. 16 50 vswro vswri 20 21 p -1 (dbm) smo-8d 1 3 2 4 hem312 19.5 70.0 shell t ypical cur v es a pplica tion notes 1.interface schematic shown as right, c 3.3 22 f , c 1000 3300pf . 1 2 2 3.connectorized package (sma-2) available. 4.see assembly section for outline and mounting information. .pay attention to heat dispersion. power supply: +17v dc rf i nput: + 10dbm storage t emp: +125 maxim um r a tings p a r a m e t e r s y m b o l u n i t typical guar a nteed f r e q u e n c y r a n g e g a i n n o i s e f i g u r e f o r 1 d b c o m p r e s s i o n s u p p l y c u r r e n t g a i n f latness t a =24 1 . bowei integra ted circuits co.,l td. active bias design supply t emperature compensation operating t emperature range: -55 +85 standard hermetic package i n p u t v s w r o u t p u t v s w r vswr i vswro - - 2.0 : 1 1.5:1 2)the gp and p-1 wil be reduced 0.1db and 2db respectively under operating at 12vdc (icc=52ma t yp) gain vswr noise figure power output lot number 4 broadband amplifier tel:+86-31 1-87091891 87091887 f ax:+86-31 1-87091282 http://www .cn-bowei.com e-mail:cjian @cn-bowei.com
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